View st2n7000 datasheet:

ST 2N7000 Small Signal MOSFET 200 mA, 60 V N-Channel DrainGateSource1. Source 2.Gate 3.DrainTO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain Source Voltage VDSS 60 VDrain-Gate Voltage (RGS = 1 M) VDGR 60 VGate-source Voltage Continuous VGS 20 V VGSM 40 V Non-repetitive ( tp 50 s)Drain Current Continuous ID 200 mA IDM 500 mA Pulsed 350 mWTotal Power Dissipation PD OJunction Temperature Tj 150 C OStorage Temperature Range Tstg - 55 to + 150 C SEMTECH ELECTRONICS LTD.Subsidiary of Sino-Tech International (BVI) Limited Dated : 26/08/2005 SEMTECHST 2N7000 OCharacteristics at Ta = 25 C Parameter Symbol Min. Max. Unit Drain-Source Breakdown Voltage V(BR)DSS 60 - V at VGS = 0, ID = 10 A Zero Gate Voltage Drain Current IDSS - 1 A at VDS = 48 V,

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