View std10nm60n datasheet:

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STD10NM60NFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage 25 VGSSDrain Current-Continuous@T =25C 10I AD5 T =175 T =125J CI Drain Current-Single Pulsed 32 ADMP Total Dissipation @T =25 70 WD CT Max. Operating Junction Temperature 150 chStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 1.79/WRth(ch-b) Thermal resistance junction-pcb max 5

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