View std10nm65n datasheet:

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STD10NM65NFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSSV Gate-Source Voltage 25 VGSSDrain Current-ContinuousTc=259I AD5.7Tc=100I Drain Current-Single Pulsed 36 ADMP Total Dissipation @T =25 90 WD CTj Max. Operating Junction Temperature 150 Storage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 1.38/WRth(ch-a) Channel-to-ambient thermal re

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