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std13n65m2std13n65m2

STD13N65M2N-channel 650 V, 0.37 typ., 10 A MDmesh M2 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDTABSTD13N65M2 650 V 0.43 10 A Extremely low gate charge32 Excellent output capacitance (Coss) profile 1 100% avalanche tested Zener-protectedDPAKApplications Switching applicationsFigure 1. Internal schematic diagramDescription, TABThis device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.AM15572v1Table 1. Device summaryOrder codes Marking Package PackagingSTD13N65M2 13N65M2 DPAK Tape and reelDecember 2014 DocID027324 Rev

 

Keywords - ALL TRANSISTORS DATASHEET

 std13n65m2.pdf Design, MOSFET, Power

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