View std13nm60nd stf13nm60nd stp13nm60nd datasheet:

STD13NM60ND, STF13NM60ND, STP13NM60NDN-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK, TO-220FP and TO-220 packagesDatasheet - production dataFeaturesTABOrder codes VDS @ TJmax RDS(on) max ID313STD13NM60ND21DPAKSTF13NM60ND 650 V 0.38 11 ATO-220FPSTP13NM60NDTAB The worldwide best RDS(on)* area among fast recovery diode devices32 100% avalanche tested1TO-220 Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche Figure 1. Internal schematic diagramcapabilitiesD(2, TAB)Applications Switching applicationsDescriptionG(1)These FDmesh II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh S(3)technology. Utilizing a new strip-layout vertical structur

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