View std18n55m5 datasheet:

Isc N-Channel MOSFET Transistor STD18N55M5FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 550 VDSSV Gate-Source Voltage 25 VGSSDrain Current-ContinuousTc=2513I AD8.3Tc=100I Drain Current-Single Pulsed 52 ADMP Total Dissipation @T =25 90 WD CT Max. Operating Junction Temperature 150 chStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 1.39/WRth(ch-a) Channel-to-ambient thermal resistance 501isc websitewww.iscsemi.cn isc & iscs

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