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STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5N-channel 800 V, 2.1 typ., 3 A MDmesh K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeatures TABOrder code VDS RDS(on) max. ID PTOT31STD4N80K5 60 W3DPAK2STF4N80K5 20 W1800 V 2.5 3 ATO-220FPTAB STP4N80K560 WTAB STU4N80K5 Industrys lowest RDS(on) x area33221 Industrys best figure of merit (FoM)1IPAKTO-220 Ultra low gate charge 100% avalanche testedFigure 1. Internal schematic diagram Zener-protectedD(2, TAB)Applications Switching applicationsDescriptionG(1)These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate S(3)charge

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