View std7n60m2 stp7n60m2 stu7n60m2 datasheet:

STD7N60M2, STP7N60M2, STU7N60M2N-channel 600 V, 0.86 typ., 5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) Order codes ID3TJmax max1STD7N60M2DPAKSTP7N60M2 650 V 0.95 5 ATABSTU7N60M2TAB Extremely low gate charge332 Lower RDS(on) x area vs previous generation21 1 Low gate input resistanceTO-220IPAK 100% avalanche tested Zener-protectedFigure 1. Internal schematic diagram, TABApplications Switching applicationsDescriptionThese devices are N-channel Power MOSFETs developed using a new generation of MDmesh technology: MDmesh II Plus low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They

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