View std7n80k5 datasheet:

isc N-Channel MOSFET Transistor STD7N80K5FEATURESStatic drain-source on-resistance:RDS(on)1.2100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 800 VDSSV Gate-Source Voltage 30 VGSI Drain Current-Continuous 6 ADI Drain Current-Single Pulsed 24 ADMP Total Dissipation @T =25 110 WD CMax. Operating Junction Temperature 150 TjStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 1.141isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc N-Channel MOSFET Transistor STD7N80K5ELECTRICAL CHARACTERISTICST =25 unless otherwise speci

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