View std7nm64n datasheet:

STD7NM64NN-channel 640 V, 5 A, 0.88 typ., MDmesh II Power MOSFET in a DPAK packageDatasheet - production dataFeatures Order code VDS RDS(on) max. IDSTD7NM64N 640 V 1.05 5 A TAB 100% avalanche tested3 Low input capacitance and gate charge1 Low gate input resistanceDPAKApplications Switching applicationsDescriptionFigure 1. Internal schematic diagram This device is an N-channel Power MOSFET developed using the second generation of D(2, TAB)MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high G(1)efficiency converters.S(3)AM01475v1Table 1. Device summaryOrder code Marking Packages PackagingSTD7NM64N 7NM64N DPAK Tape and r

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