View stu660 std660 datasheet:

GreenProductSTU/D660SamHop Microelectronics Corp.Ver 2.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.620 @VGS=10VTO-252 and TO-251 Package.80V 3A800 @VGS=4.5VESD Protected.DGGGSSSTU SERIESSTD SERIESTO-252AA(D-PAK)TO-251(I-PAK)S(TC=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSymbol Parameter UnitsLimitVDSDrain-Source Voltage 80VVGS Gate-Source Voltage 20 VTC=25C 3 AcIDDrain Current-ContinuousTC=70C A2.4acIDMA-Pulsed 8.8dEAS Single Pulse Avalanche Energy 4 mJTC=25C 42 WPD Maximum Power DissipationTC=70C 27 WOperating Junction and StorageTJ, TSTG Temperature Range -55 to 150 CTHERMAL CHARACTERISTICSR3JC Thermal Resistance, Junctio

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