View tk5p53d datasheet:

TK5P53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK5P53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.2 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance: Yfs = 2.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) 1.14MAX 2.29 Characteristics Symbol Rating Unit0.76 0.12 Drain-source voltage VDSS 525 VGate-source voltage VGSS 30 VDC (Note 1) ID 5 1 2 3Drain current A Pulse (t = 1 ms) IDP 20 1. GATE (Note 1)2. DRAIN HEAT SINK Drain power dissipation (Tc = 25C) PD 80 W3. SOURCE Single pulse avalanche energy EAS 142 mJ(Note 2)JEDEC Avalanche current (Note 3) IAR 5 AJEITA Rep

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