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TK8P65WMOSFETs Silicon N-Channel MOS (DTMOS)TK8P65WTK8P65WTK8P65WTK8P65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.55 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.3 mA)3. Packaging and Internal Circuit3. Packaging and Internal Circuit3. Packaging and Internal Circuit3. Packaging and Internal Circuit1: Gate2: Drain (Heatsink)3: SourceDPAKStart of commercial production2014-052014-09-171Rev.3.0TK8P65W4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)4. Absolute Maximum Ratings (

 

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