View wtm2310a datasheet:

WTM2310AN-Channel Enhancement 3 DRAINMode Power MOSFET DRAIN CURRENT5.0 AMPERESP b Lead(Pb)-FreeDRAIN SOUCE VOLTAGE160 VOLTAGEGATEFeatures:2 SOURCE* Simple Drive Requirement.* Super High Density Cell Design for Extremely Low RDS(ON).1231. GATE2. DRAIN3. SOURCESOT-89Maximum Ratings (TA=25C Unless Otherwise Specified)Rating Symbol Value UnitVDS VDrain-Source Voltage 60Gate-Source Voltage VG S 20 VT =25CA 5.0IDContinuous Drain CurrentAT =70C 4.0AIDMPulsed Drain Current A10PDTotal Power Dissipation (TA=25C ) 1.50 WC/WRMaximum Junction-Ambient 3 JA 83.3TJ-55~+150 COperating Junction Temperature RangeTstg -55~+150 CStorage Temperature RangeNote 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t

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