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Silicon N-Channel Power MOSFET R CS30N20F A9R General Description VDSS 200 V CS30N20F A9R, the silicon N-channel Enhanced ID 30 A PD(TC=25 ) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 70 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features Fast Switching Low ON Resistance(Rdson 80m ) Low Gate Charge (Typical Data 38nC) Low Reverse transfer capacitances(Typical 24pF) 100% Single Pulse avalanche energy Test Applications Power switch circuit of adaptor and charger. 1 Absolute Tc= 25 unless otherwise specified Symbol Parameter Rating Units

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 cs30n20fa9r.pdf Проектирование, MOSFET, Мощность

 cs30n20fa9r.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 cs30n20fa9r.pdf База данных, Инновации, ИМС, Транзисторы