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EHBA036R1 Single N-Ch 30V Fast Switching MOSFETs Features BVDSS 30 V Super Low Gate Charge 100% EAS Guaranteed ID@VGS=10V ,TC=25 C 50 A Green Device Available VGS = 10 V , ID = 20 A 7 Excellent CdV/dt effect decline RDSON(MAX) m Advanced high cell density Trench VGS = 4.5 V , ID = 15 A 10 technology Application Battery management Power Management Switches Description The EHBA036R1 is the high cell density trenched N-Ch MOSFETs, which provide excellent RDSON and gate charge for most of the battery management applications. The EHBA036R1 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Equivalent Circuit Outline PRPAK5 6 Package Marking and Ordering Information Device Marking Date Code Device Package Quantity A036R1 YWWXXX PRPAK5 6 5000 pcs Shanghai Huayuan Microelectronic

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 ehba036r1.pdf Проектирование, MOSFET, Мощность

 ehba036r1.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ehba036r1.pdf База данных, Инновации, ИМС, Транзисторы