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FKBB3105 FETek Technology Corp. P-Ch 30V Fast Switching MOSFETs Product Summary 100% EAS Guaranteed Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline -30V 14m -42A Advanced high cell density Trench technology Description PRPAK3X3 Pin Configuration The FKBB3105 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBB3105 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Absolute Maximum Ratings Rating Symbol Parameter 10s Steady State Units V Drain-Source Voltage -30 V DS V Gate-Source Voltage 20 V GS I =25 Continuous Drain Current, V @ -10V1 -42 A D@T GS C I =100 Continuous Drain Current, V @ -10V1 -

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 fkbb3105.pdf Проектирование, MOSFET, Мощность

 fkbb3105.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 fkbb3105.pdf База данных, Инновации, ИМС, Транзисторы