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July 2020 HCA60R070F 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 42 A Excellent stability and uniformity RDS(on), max 70 m 100% Avalanche Tested Fast Recovery Time Qg, Typ 106 nC Application Package & Internal Circuit TO-247 SYMBOL Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) AC to DC Converters G D Telecom, Solar S Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value Unit VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage 20 V Drain Current - Continuous (TC = 25 ) 42.0 A ID Drain Current - Continuous (TC = 100 ) 26.6 A IDM1) Drain Current - Pulsed 126 A EAS2) Single Pulsed Avalanche Energy 807 mJ

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