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MOS-TECH Semiconductor Co.,LTD January 2010 N-Channel Power MOSFET 4 V, A, m Features Application RDS(on) = 3m (Typ.)@ VGS = 10V, ID = 80A Automotive Engine Control Qg(tot) = 345nC (Typ.)@ VGS = 10V Powertrain Management Low Miller Charge Motors, Solenoids Low QRR Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) RoHS Compliant Integrated Starter/ Alternator Distributed Power Architectures and VRMs Primary Switch for 12V Systems D G TO-220 G D S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 45 V VGSS Gate to Source Voltage 20 V Drain Current - Continuous (TC = 25oC, Silicon Limited) 120* ID - Continuous (TC = 100oC, Silicon Limited) 90* A - Continuous (T