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NPN Power Silicon Transistor 2N3766 & 2N3767 Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/518 TO-66 (TO-213AA) Package Maximum Ratings Ratings Symbol 2N3766 2N3767 Units Collector - Emitter Voltage VCEO 60 80 Vdc Collector - Base Voltage VCBO 80 100 Vdc Emitter - Base Voltage VEBO 6.0 Vdc Base Current IB 2.0 Adc Collector Current IC 4.0 Adc Total Power Dissipation @ TC = +25 C (1) PT 25 W Operating & Storage Temperature Range Top, Tstg -65 to +200 C Thermal Characteristics Characteristics Symbol Maximum Units Thermal Resistance, Junction-to-Case R JC 2.66 C/W 1) Derate linearly 143 mW/ C between TC = +25 C and TC = +200 C Electrical Characteristics (TC = 25 C unless otherwise noted) OFF Characteristics Symbol Mimimum Maximum Units Collector - Emitter Breakdown Voltage IC = 100 mAdc 2N3766 V(BR)CEO 60 - - - Vdc 2N3767 80 Co

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