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ATM8205DNPDDual N-Channel Enhancement Mode Power MOSFETDrain-Source Voltage:20V Continuous Drain Current:5ADescriptionsTSSOP8The ATM8205DNPD uses advanced trench technology to provideexcellent RDS(ON),low gate charge and operation with gate voltagesas low as 2.5V.This device is suitable for use as a battery protectionor in other switching application.Features VDS=20V,ID=5ATyp.RDS(ON)= 20m @ VGS=4.5VTyp.RDS(ON)= 25m @ VGS=2.5V High power and current handing capability Lead free product is acquired Surface mount packageApplications Battery protection Load switch Power managementAbsolute Maximum Ratings (Ta=25 unless otherwise specified)Parameter Symbol Limit UnitsVDS 20Drain-Source Voltage VVGS12Gate-Source Voltage VID 5Drain Current-Continuous AIDM 25Drain Current-Pulsed AMaximum Power Dissipa
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atm8205dnpd.pdf Проектирование, MOSFET, Мощность
atm8205dnpd.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
atm8205dnpd.pdf База данных, Инновации, ИМС, Транзисторы
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