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2N7002EY N-Channel Enhancement Mode MOSFET Product Summary V R I (BR)DSS DS(on)MAX D 2.5 @10V 60V 0.3A 3.0 @4.5V Feature Application Trench Power MV MOSFET technology Battery operated systems Voltage controlled small signal switch Solid-state relays Low input Capacitance Fast Switching Speed Package Circuit diagram SOT-23 Marking 72K Document ID Issued Date Revised Date Revision Page. Page 1 AS-3150428 2020/08/10 2023/05/22 B 5 2N7002EY N-Channel Enhancement Mode MOSFET Absolute maximum ratings (T =25 unless otherwise noted) A Parameter Symbol Value Unit Drain-Source Voltage V 60 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I 0.3 A D Pulsed Drain Current1) I 1.5 A DM Power Dissipation P 0.3 W D Thermal Resistance from Junction to Ambient2) R 416 /W JA Junction Temperature T 150 J Storage Tem

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