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AS2310A N-Channel Enhancement Mode MOSFET Product Summary V R I (BR)DSS DS(on)MAX D 80m @10V 60V 3A 95m @4.5V Feature Application High power and current handing capability Power switching application Lead free product is acquired Uninterruptible power supply Trench Power LV MOSFET technology PWM application High Speed switching Package Circuit diagram SOT-23 Marking 03N06C. Document ID Issued Date Revised Date Revision Page. Page 1 AS-3150319 2013/03/08 2021/05/18 E 6 AS2310A N-Channel Enhancement Mode MOSFET Absolute maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V 60 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I 3 A D Pulsed Drain Current I 20 A DM Power Dissipation P 1.2 W D Thermal Resistance from Junction to Ambient R 105 /W JA Junction Tem

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