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AS6004 P-Channel Enhancement Mode MOSFET Product Summary V R I (BR)DSS DS(on)MAX D 120m @-10V -60V -4A 170m @-4.5V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-23-3L Marking 60P04Y XXXXX http //www.anbonsemi.com Document ID Issued Date Revised Date Revision Page. TEL +86-755-23776891 Page 1 AS-3150275 2003/03/08 2021/09/10 C 5 FAX +86-755-81482812 AS6004 P-Channel Enhancement Mode MOSFET Absolute maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V -60 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I -4 A D Pulsed Drain Current I -12 A DM Power Dissipation P 1.5 W D 83.3 Thermal Resistance from Junction to Ambient R /W JA

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 as6004.pdf Проектирование, MOSFET, Мощность

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