Скачать даташит для aod4s60_aoi4s60_aou4s60:

AOD4S60/AOI4S60/AOU4S60 TM 600V 4A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOD4S60 & AOI4S60 & AOU4S60 have been fabricated using the advanced MOSTM high voltage IDM 16A process that is designed to deliver high levels of RDS(ON),max 0.9 performance and robustness in switching applications. Qg,typ 6nC By providing low RDS(on), Qg and EOSS along with Eoss @ 400V 1.5 J guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% Rg Tested TO252 TO251A TO251 DPAK IPAK D Top View Bottom View Top View Top View Bottom View Bottom View D D G G S S G D D S G S S D D G G S S G AOD4S60 AOI4S60 AOU4S60 Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Maximum Units Drain-Source