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AOD7S60/AOU7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOD7S60 & AOU7S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 33A designed to deliver high levels of performance and RDS(ON),max 0.6 robustness in switching applications. Qg,typ 8.2nC By providing low RDS(on), Qg and EOSS along with Eoss @ 400V 1.9 J guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% Rg Tested TO252 TO251 DPAK D Top View Bottom View Top View Bottom View D D G S G S D G S D G G S S AOD7S60 AOU7S60 Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V TC=25 C 7 Continuous

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 aod7s60 aou7s60.pdf Проектирование, MOSFET, Мощность

 aod7s60 aou7s60.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 aod7s60 aou7s60.pdf База данных, Инновации, ИМС, Транзисторы