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AOD7S65/AOU7S65/AOI7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOD7S65 & AOU7S65 & AOI7S65 have been fabricated using the advanced MOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65 performance and robustness in switching applications. Qg,typ 9.2nC By providing low RDS(on), Qg and EOSS along with Eoss @ 400V 2 J guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% Rg Tested TO252 TO251A TO251 DPAK IPAK D Top View Bottom View Top View Bottom View Top View Bottom View D D G S G S S G G D S D D D G G S S G S AOI7S65 AOU7S65 AOD7S65 Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Maximum Units Drain-Source

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 aod7s65 aou7s65 aoi7s65.pdf Проектирование, MOSFET, Мощность

 aod7s65 aou7s65 aoi7s65.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 aod7s65 aou7s65 aoi7s65.pdf База данных, Инновации, ИМС, Транзисторы