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AOK065V120X2 1200 V SiC Silicon Carbide Power MOSFET Features Product Summary Proprietary SiC MOSFET technology V @ T 1200 V DS J, max Low loss, fast switching speeds with low R G I 85 A DM Optimized drive voltage (V = 15 V) GS R 65 m DS(ON), typ for broad driver compatibility Q 155 nC rr Robust body diode and low Qrr E @ 800 V 30 J OSS 100% UIS Tested Applications Renewable Industrial EV Charger UPS Solar Inverters SMPS RoHS Compliant Motor Drives Pin Configuration D D (2) Top View Bottom View G G (1) (3) S (2) S (1) (3) Ordering Part Number Package Type Form Shipping Quantity AOK065V120X2 TO-247-3L Tube 30/Tube Absolute Maximum Ratings (T = 25 C, unless otherwise noted) A Symbol Parameter AOK065V120X2 Units VDS Drain-Source Voltage 1200 V Maximum -8/+18 V GS, MAX VGS,OP,TRANS

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 aok065v120x2.pdf Проектирование, MOSFET, Мощность

 aok065v120x2.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 aok065v120x2.pdf База данных, Инновации, ИМС, Транзисторы