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AOK065V65X2 650V SiC Silicon Carbide Power MOSFET Features Product Summary Proprietary SiC MOSFET technology V @ T 650V DS J, max Low loss, fast switching speeds with low R G I 85A DM Optimized drive voltage (V =15V) GS R 65m DS(ON), typ for broad driver compatibility Q 104nC rr Robust body diode and low Qrr E @ 400V 11 J OSS 100% UIS Tested Applications Renewable Industrial EV Charger UPS Solar Inverters SMPS Motor Drives Pin Configuration D D (2) Top View Bottom View G G (1) (3) S (2) S (1) (3) Ordering Part Number Package Type Form Shipping Quantity AOK065V65X2 TO-247-3L Tube 30/Tube Absolute Maximum Ratings T = 25 C, unless otherwise noted A Symbol Parameter AOK065V120X2 Units VDS Drain-Source Voltage 650 V Maximum -8/+18 VGS, MAX VGS,OP,TRANS Gate-Source Voltage -8/+20

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 aok065v65x2.pdf Проектирование, MOSFET, Мощность

 aok065v65x2.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 aok065v65x2.pdf База данных, Инновации, ИМС, Транзисторы