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ALPHA & OMEGA AOK500V120X2 SEMICONDUCTOR 1200 V SiC Silicon Carbide Power MOSFET Features Product Summary VDS @ TJ, max 1200 V Proprietary SiC MOSFET technology IDM 10 A Low loss, with low RDS,ON RDS(ON), typ 500 m Fast switching with low RG and low capacitance Optimized gate drive voltage (VGS = 15 V) Q 50 nC rr Low reverse recovery diode (Qrr) E @ 800 V 6 J OSS 100% UIS Tested Applications Renewable Industrial EV Charger UPS Solar Inverters SMPS Motor Drives Pin Configuration D Top View Bottom View (2) G (3) (1) S (2) (3) (1) Part Number Package Type Form Shipping Quantity AOK500V120X2 TO-247-3L Tube 30/Tube Absolute Maximum Ratings TA = 25 C, unless otherwise specified. Symbol Parameter AOK500V120X2 Units VDS Drain-Source Voltage 1200 V VGS,MAX Maximum -8/+18 VGS,OP,TRANS Gate-So