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AOM065V120X2Q 1200 V SiC Silicon Carbide Power MOSFET Features Product Summary Proprietary SiC MOSFET technology V @ T 1200 V DS J, max Low loss, with low R DS, ON I 85 A DM Fast switching with low R and low capacitance G R 65 m DS(ON), typ Optimized gate drive voltage (V = 15 V) GS Q 142 nC rr Low reverse recovery diode (Qrr) E @ 800 V 30 J OSS AEC-Q101 Automotive Qualified 100% UIS Tested Applications xEV Charger Electric Vehicle Supply Equipment (EVSE) RoHS Compliant Motor Drives Automotive Inverters Pin Configuration D Bottom View (1) Top View G (4) K (4) S (3) (2)(3) (2) (1) Ordering Part Number Package Type Form Shipping Quantity AOM065V120X2Q TO-247-4L Tube 30/Tube Absolute Maximum Ratings (T = 25 C, unless otherwise noted) A Symbol Parameter AOM065V120X2Q Units V