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AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60 TM 600V 11A a MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT11S60L & AOB11S60L & AOTF11S60L & AOTF11S60 have been fabricated using the advanced IDM 45A aMOSTM high voltage process that is designed to deliver high RDS(ON),max 0.399W levels of performance and robustness in switching applications. Qg,typ 11nC By providing low RDS(on), Qg and EOSS along with guaranteed Eoss @ 400V 2.7mJ avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% Rg Tested Top View TO-263 TO-220 TO-220F(3kVAC;1s) D2PAK D D D S G S D D S G S G G AOT11S60L AOTF11S60(L) AOB11S60L Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol AOT11S60L/AOB11S60L AOTF11S60 AOTF11S60L Units Drain-Source Voltage VD