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AOT11S65/AOB11S65/AOTF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 13.2nC By providing low RDS(on), Qg and EOSS along with Eoss @ 400V 2.9 J guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number AOT11S65L & AOB11S65L & AOTF11S65L Top View TO-263 TO-220 TO-220F D D2PAK D G S D S S G D S G G AOT11S65 AOTF11S65 AOB11S65 Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol AOT11S65/A

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 aot11s65 aob11s65 aotf11s65.pdf Проектирование, MOSFET, Мощность

 aot11s65 aob11s65 aotf11s65.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 aot11s65 aob11s65 aotf11s65.pdf База данных, Инновации, ИМС, Транзисторы