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AOT15S65L/AOB15S65L/AOTF15S65L/AOTF15S65 TM 650V 15A a MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT15S65L & AOB15S65L & AOTF15S65L & AOTF15S65 have been fabricated using the advanced IDM 60A aMOSTM high voltage process that is designed to deliver high RDS(ON),max 0.29W levels of performance and robustness in switching Qg,typ 17.2nC applications. Eoss @ 400V 3.6mJ By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% Rg Tested Top View TO-263 TO-220 TO-220F D2PAK D D D G S S S D D G G S G AOT15S65L AOTF15S65(L) AOB15S65L Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol AOT15S65L/AOB15S65L AOTF15S65 AOTF15S65L Units Drain-Source Voltage VDS 650 V

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 aot15s65l aob15s65l aotf15s65l aotf15s65.pdf Проектирование, MOSFET, Мощность

 aot15s65l aob15s65l aotf15s65l aotf15s65.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 aot15s65l aob15s65l aotf15s65l aotf15s65.pdf База данных, Инновации, ИМС, Транзисторы