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AOT25S65/AOB25S65/AOTF25S65 TM 650V 25A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced MOSTM high voltage IDM 104A process that is designed to deliver high levels of RDS(ON),max 0.19 performance and robustness in switching applications. Qg,typ 26.4nC By providing low RDS(on), Qg and EOSS along with Eoss @ 400V 5.8 C guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number AOT25S65L & AOB25S65 & AOTF25S65L Top View TO-263 TO-220 TO-220F D D2PAK D S D S G S G D G G S AOT25S65 AOTF25S65 AOB25S65 Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol AOT25S65/AOB2

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 aot25s65 aob25s65 aotf25s65.pdf Проектирование, MOSFET, Мощность

 aot25s65 aob25s65 aotf25s65.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 aot25s65 aob25s65 aotf25s65.pdf База данных, Инновации, ИМС, Транзисторы