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AOT29S50L/AOB29S50L/AOTF29S50L/AOTF29S50 TM 500V 29A MOS Power Transistor General Description Product Summary VDS @ Tj,max 600V The AOT29S50L & AOB29S50L & AOTF29S50L & AOTF29S50 have been fabricated using the advanced IDM 120A MOSTM high voltage process that is designed to deliver high RDS(ON),max 0.15 levels of performance and robustness in switching Qg,typ 26.6nC applications. Eoss @ 400V 6.3 J By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% Rg Tested Top View TO-263 TO-220 TO-220F D2PAK D D D G S S S D D G S G G AOT29S50L AOTF29S50(L) AOB29S50L Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol AOT29S50L/AOB29S50L AOTF29S50 AOTF29S50L Units Drain-Source Voltage VDS 500