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AOT4S60/AOB4S60/AOTF4S60 TM 600V 4A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced MOSTM high voltage IDM 16A process that is designed to deliver high levels of RDS(ON),max 0.9 performance and robustness in switching applications. Qg,typ 6nC By providing low RDS(on), Qg and EOSS along with Eoss @ 400V 1.5 J guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number AOT4S60L & AOB4S60L & AOTF4S60L Top View TO-263 D TO-220 TO-220F D2PAK D G S S S D D S G G G AOT4S60 AOTF4S60 AOB4S60 Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol AOT4S60/AOB4S60 AOTF4S60 Unit

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 aot4s60 aob4s60 aotf4s60.pdf Проектирование, MOSFET, Мощность

 aot4s60 aob4s60 aotf4s60.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 aot4s60 aob4s60 aotf4s60.pdf База данных, Инновации, ИМС, Транзисторы