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AOT7S60/AOB7S60/AOTF7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced MOSTM high voltage IDM 33A process that is designed to deliver high levels of RDS(ON),max 0.6 performance and robustness in switching applications. Qg,typ 8.2nC By providing low RDS(on), Qg and EOSS along with Eoss @ 400V 1.9 J guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number AOT7S60L & AOB7S60L & AOTF7S60L Top View TO-263 TO-220 TO-220F D D2PAK D G S S S D D G G S G AOT7S60 AOTF7S60 AOB7S60 Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol AOT7S60/AOB7S60 AOTF7S60L U

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 aot7s60 aob7s60 aotf7s60.pdf Проектирование, MOSFET, Мощность

 aot7s60 aob7s60 aotf7s60.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 aot7s60 aob7s60 aotf7s60.pdf База данных, Инновации, ИМС, Транзисторы