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AOW25S65/AOWF25S65 TM 650V 25A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW25S65 & AOWF25S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 104A designed to deliver high levels of performance and RDS(ON),max 0.19 robustness in switching applications. Qg,typ 26.4nC By providing low RDS(on), Qg and EOSS along with Eoss @ 400V 5.8 C guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% Rg Tested TO-262 TO-262F D Top View Bottom View Top View Bottom View G G S G S D D S S D G D S G AOW25S65 AOWF25S65 Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol AOW25S65 AOWF25S65 Units Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V TC=25 C 25 25*

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 aow25s65 aowf25s65.pdf Проектирование, MOSFET, Мощность

 aow25s65 aowf25s65.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 aow25s65 aowf25s65.pdf База данных, Инновации, ИМС, Транзисторы