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AOW7S65/AOWF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW7S65 & AOWF7S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 30A designed to deliver high levels of performance and RDS(ON),max 0.65 robustness in switching applications. Qg,typ 9.2nC By providing low RDS(on), Qg and EOSS along with Eoss @ 400V 2 J guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% Rg Tested TO-262 TO-262F D Top View Bottom View Top View Bottom View G G S G S D D S S D G D S G AOW7S65 AOWF7S65 Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol AOW7S65 AOWF7S65 Units Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V TC=25 C 7 7* Continuous Dr

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 aow7s65 aowf7s65.pdf Проектирование, MOSFET, Мощность

 aow7s65 aowf7s65.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 aow7s65 aowf7s65.pdf База данных, Инновации, ИМС, Транзисторы