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AP2306AGN Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 30V Lower on-resistance D RDS(ON) 35m Surface mount package ID 5A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and D cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications. G S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage V 12 Continuous Drain Current3, VGS @ 4.5V ID@TA=25 5 A Continuous Drain Current3, VGS @ 4.5V ID@TA=70 4 A IDM Pulsed Drain Current1 20 A PD@TA=25 Total Power Dissipation 1.38 W Linear Derating Factor 0.01

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 ap2306agn.pdf Проектирование, MOSFET, Мощность

 ap2306agn.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ap2306agn.pdf База данных, Инновации, ИМС, Транзисторы