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AKF30N10S 30V N-Channel Enhancement Mode MOSFET General Features RDS(ON) RDS(ON) Low RDS(ON) BVDSS Low Gate Charge @VGS=10V @VGS=4.5V Advanced high Cell density Trench Technology 30V 7.3m 9.0 m RoHS Compliant Halogen-free available ID 45A 100% Avalanche Tested PDFN3333 D Applications D Power Management in Inverter System G Synchronous Rectification Load Switch S S S G S Ordering Information Part Number Package Marking Remark AKF30N10S PDFN3333 30N10S Halogen Free Absolute Maximum Ratings TA=25 C unless otherwise specified Symbol Parameter Rating Unit VDSS Drain-Source Voltage[1] 30 V VGS Gate Source Voltage 20 V TC=25 45 A C ID Continuous Drain Current TC=100 28 A C IDP 300us Pulsed Drain Current Tested[2] 180 A EAS Single Pulse Avalanche Energy[3] 25 mJ Power Di

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 akf30n10s.pdf Проектирование, MOSFET, Мощность

 akf30n10s.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 akf30n10s.pdf База данных, Инновации, ИМС, Транзисторы