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FTE15C35G 350V N+P Dual Channel MOSFETs General Features Proprietary Advanced Planar Technology BV R (Max.) I DSX DS(ON) D Rugged Polysilicon Gate Cell Structure Fast Switching Speed 350V 15 300mA RoHS Compliant Halogen-free available -350V 30 -200mA SOP-8 D1 D1 D2 D1 Applications D2 D2 Power Management G1 G1 G2 Load Switch S1 Motor Driver S2 S1 S2 G2 Ordering Information Part Number Package Marking Remark FTE15C35G SOP-8 15C35 Halogen Free Absolute Maximum Ratings(T =25 C unless otherwise noted) A Symbol Parameter N channel P channel Unit 350 V Drain-to-Source Voltage[1] -350 V DSS V Gate-to-Source Voltage 20 20 V GS I Continuous Drain Current 0.3 -0.2 A D I 300us Pulsed Drain Current Tested[2] 1.2 -0.8 A DP P Power Dissipation 2.5 W D -55 to 150 T and T Operating and Sto

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 fte15c35g.pdf Проектирование, MOSFET, Мощность

 fte15c35g.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 fte15c35g.pdf База данных, Инновации, ИМС, Транзисторы