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FTF15N35D Dual N-Channel 350V Enhancement Mode MOSFETs General Features Proprietary Advanced Planar Technology BV R (Max.) I DSS DS(ON) D Rugged Polysilicon Gate Cell Structure Fast Switching Speed 350V 15 1A RoHS Compliant Halogen-free available PDFN3333 Applications High Efficiency SMPS Adaptor/Charger Active PFC Ordering Information Part Number Package Marking Remark FTF15N35D PDFN3333 15N35D Halogen Free Absolute Maximum Ratings T =25 unless otherwise specified A Symbol Parameter FTF15N35D Unit V Drain-to-Source Voltage[1] 350 V DSS I Continuous Drain Current 1 D A I Pulsed Drain Current[2] 4 DM P Power Dissipation 16 W D V Gate-to-Source Voltage 20 V GS Soldering Temperature T 300 L Distance of 1.6mm from case for 10 seconds T and T Operating and Storage Temperature R

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 ftf15n35d.pdf Проектирование, MOSFET, Мощность

 ftf15n35d.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ftf15n35d.pdf База данных, Инновации, ИМС, Транзисторы