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FTF25N35DHVT Dual N-Channel 250V Enhancement Mode MOSFETs General Features Proprietary Advanced Planar Technology BV R (Max.) I DSS DS(ON) D Rugged Polysilicon Gate Cell Structure Proprietary Advanced High Vth Technology 250V 25 0.9A RoHS Compliant Halogen-free available PDFN3333 Ordering Information Part Number Package Marking Remark FTF25N35DHVT PDFN3333 25N35DHVT Halogen Free Absolute Maximum Ratings T =25 unless otherwise specified A Symbol Parameter FTF25N35DHVT Unit V Drain-to-Source Voltage[1] 250 V DSS I Continuous Drain Current 0.9 D A I Pulsed Drain Current[2] 3.6 DM P Power Dissipation 16 W D V Gate-to-Source Voltage 20 V GS Soldering Temperature T 300 L Distance of 1.6mm from case for 10 seconds T and T Operating and Storage Temperature Range -55 to 150 J STG Caution Stresses

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 ftf25n35dhvt.pdf Проектирование, MOSFET, Мощность

 ftf25n35dhvt.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ftf25n35dhvt.pdf База данных, Инновации, ИМС, Транзисторы