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ASDM100N34KQ 100V N-Channel MOSFET General Features Product Summary Advanced Trench Technology V 100 V DSS Lead free product is acquired 24 Provide Excellent RDS(ON) and Low Gate Charge R m DS(ON)-Typ I 34 A D Application Load Switch PWM Application Power management D G S TO-252 Absolute Maximum Ratings (T =25 unless otherwise specified) C Symbol Parameter Max. Units Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS T = 25 C 34 A I Continuous Drain Current D T = 100 C 20 A Pulsed Drain Current note1 I 120 A DM Single Pulsed Avalanche Energy note2 EAS 110 mJ P Power Dissipation T = 25 63 W D C Thermal Resistance, Junction to Case R 2.5 /W JC T , T Operating and Storage Temperature Range -55 to +175 J STG DEC 2018 Version1.0 1/8 Ascend Semicondutor Co.,Ltd ASDM1

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