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ASDM100R045NQ 100V N-Channel MOSFET General Features Product Summary High density cell design for ultra low Rdson Fully characterized avalanche voltage and current V DS 100 V Good stability and uniformity with high EAS R DS(on),TYP@ VGS=10 V 3.7 m Excellent package for good heat dissipation I D 90 A Special process technology for high ESD capability Application Automotive applications Hard switched and high frequency circuits Uninterruptible power supply DFN5x6-8L Absolute Maximum Ratings (T =25 unless otherwise specified) C Parameter Symbol Condition Value Unit VDS Drain-Source Voltage 100 V 90 TC=25 A ID Continuous Drain Current1 TC=70 48 A VGS Gate-Source Voltage 20 V IDM TC=25 360 A Pulsed Drain Current2 PD TC=25 60 W Total Power Dissipation TSTG Storage Temperature Range -55 to 150 TJ Oper

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 asdm100r045nq.pdf Проектирование, MOSFET, Мощность

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