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ASDM100R066NQ 100V N-CHANNEL MOSFET Features Product Summary Advanced Trench MOS Technology 100 V Low Gate Charge VDS RDS(on),Typ 5.9 @ VGS=10V m Low R DS(ON) ID 68 A 100% EAS Guaranteed Green Device Available Applications Power Management in Desktop Computer or DC/DC Converters. Isolated DC/DC Converters in Telecom and Industrial. D G S DFN5x6-8 Absolute Maximum Ratings Symbol Parameter Rating Units V Drain-Source Voltage 100 V DS V Gate-Source Voltage 20 V GS I =25 Continuous Drain Current1,6 68 A D@T C I =70 Continuous Drain Current1,6 48 A D@T C I Pulsed Drain Current2 140 A DM EAS Single Pulse Avalanche Energy3 61 mJ I Avalanche Current 35 A AS P =25 Total Power Dissipation4 108 W D@T C T Storage Temperature Range -55 to 150 STG T Operating Junction Temperature Range -55 to

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