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ASDM100R090NP 100V N-CHANNEL MOSFET Product Summary Features High Speed Power Switching, Logic Level VDS 100 V Enhanced Body diode dv/dt capability RDS(on),typ m VGS=10V 9 Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested ID 75 A Lead Free, Halogen Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit DC/DC in Telecoms and Inductrial D G D S G S Absolute Maximum Ratings at Tj=25 (unless otherwise specified) Parameter Symbol Conditions Value Unit TC=25 75 Continuous Drain Current (Silicon Limited) ID A TC=100 38 Drain to Source Voltage VDS - 100 V Gate to Source Voltage VGS - V +20/-12 Pulsed Drain Current IDM - 80 A Avalanche Energy, Single Pulse EAS L=0.1mH, TC=25 80 mJ Power Dissipation PD TC=25 3.1 W Operating and Storage Temperature TJ, Tstg -

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