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ASDM100R160NKQ 100V N-Channel Power MOSFET General Description Product Summary Low R & FOM DS(on) Extremely low switching loss Excellent stability and uniformity V DS 100 V Fast switching and soft recovery R DS(on),Typ@ VGS=10 V 14 m Applications I D A 45 Power switching application Hard switched and high frequency circuits Uninterruptible power supply Absolute Maximum Ratings (T =25 unless otherwise noted) A Parameter Symbol Limit Unit Drain-source Voltage VDS 100 V Gate-source Voltage VGS 20 V TC=25 45 Drain Current ID A TC=100 28.5 Pulsed Drain Current A IDM 180 A Avalanche energy B EAS 81 mJ Tc=25 72 Total Power Dissipation C PD W Tc=100 28.8 Junction and Storage Temperature Range TJ ,TSTG -55 +150 Thermal resistance Parameter Symbol Typ Max Units Thermal Resistance Junction-to

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